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ZXMHN6A07T8
60V N-CHANNEL MOSFET H-BRIDGE
SUMMARY V(BR)DSS= 60V : RDS(on)= 0.3 ; ID= 1.6A DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
* Compact package * Low on state losses * Low drive requirements * Operates up to 60V * 1 Amp continuous rating
SM8
APPLICATIONS
* Motor control
ORDERING INFORMATION
DEVICE ZXMHN6 A0 7 T8 TA ZXMHN6 A0 7 T8 TC REEL SIZE 7" 13" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1,000 units 4,000 units
PINOUT
DEVICE MARKING
* ZXMH
N6A07
TOP VIEW
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SEMICONDUCTORS
ZXMHN6A07T8
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-source voltage Gate-source voltage SYMBOL V DSS V GS LIMIT 60 20 1.6 1.3 1.4 I DM IS I SM PTOT 1.1 1.4 1.6 W W W
(c)
UNIT V V A A A A A A
Continuous drain current (V GS= 1 0 V; T A = 2 5 C)(b) (d) I D (V GS= 1 0 V; T A = 7 0 C)(b) (d) (V GS= 1 0 V; T A = 2 5 C)(a) (d) Pulsed drain current
(c)
9 1 9
Continuous source current (body diode) (b) (d) Pulsed source current (body diode) Any Single transistor " on" (a) (d) Single transistor ` on' (b) (d) Two transistors ` on' equally (a) (e) Linear derating factor above 2 5 C (a) Single transistor " on" (a) (d) Single transistor ` on' (b) (d) Two transistors ` on' equally (a) (e) Thermal resistance - junction to ambient Single transistor " on" (a) (d) Single transistor " on"
(b) (d)
Total power dissipation at T A = 2 5 C
8.8 11.2 13.2 Rth(j-amb) 114 89 76 T j, T stg -55 to + 150
mW/ C mW/ C mW/ C
C/W C/W C/W C
Two transistors ` on' equally (a) (e) Operating and storage temperature range
(a) For a device mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2oz weight copper in still air conditions with the heat sink split into three equal areas, one for each drain connection. (b) For a device surface mounted on a FR4 PCB at t = 10 sec. (c) Repetitive rating on 50mm x 50mm x 1.6mm FR4 PCB, duty cycle 2% , pulse width 300 S in still air conditions with the heat sink split into three equal areas, one for each drain connection. (d) For device with one active die. (e) For any two die not sharing the same drain connection.
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CHARACTERISTICS
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ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated)
PARAMETER STATIC Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state resistance (1 ) Forward transconductance DYNAMIC (3 ) Input capacitance Output capacitance Reverse transfer capacitance SWITCHING(2 ) (3 ) Turn-on-delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate drain charge SOURCE-DRAIN DIODE Diode forward voltage (1 ) Reverse recovery time (3 ) Reverse recovery charge (3 ) V SD t rr Q rr 21 21 0.95 V ns nC T j= 2 5 C, I S = 0 . 4 5 A, V GS = 0 V T j= 2 5 C, I F = 1 . 0 A, di/ dt= 1 0 0 A/ s C iss C oss C rss t d(on) tr t d(off) tf Qg Q gs Q gd 166 20 9 pF pF pF V DS = 4 0 V , V GS = 0 V f= 1 MHz
(1 ) (3 )
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
V (BR)DSS I DSS I GSS V GS(th) RDS(on) gfs
60 1.0 100 1.0 3.0 0.3 0.45 2.3
V A nA V
I D = 2 5 0 A, V GS = 0 V V DS = 6 0 V , V GS = 0 V V GS = 2 0 V , V DS = 0 V I D = 2 5 0 A, V DS = V GS V GS = 1 0 V , I D = 1 . 8 A V GS = 4 . 5 V , I D = 1 . 3 A V DS = 1 5 V , I D = 1 . 8 A
S
1.8 1.4 4.9 2.0 3.2 0.7 0.8
ns ns ns ns nC nC nC V DS = 3 0 V , V GS = 1 0 V ID= 1 . 8 A V DD = 3 0 V , I D = 1 . 8 A RG @ 6 . 0 W, V GS = 1 0 V
NOTES (1) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.
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TYPICAL CHARACTERISTICS
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TYPICAL CHARACTERISTICS
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ZXMHN6A07T8
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
DIM A A1 b c D E Millimeters Min 0.02 0.24 6.3 3.3 Max 1.7 0.1 0.32 6.7 3.7 Typ. 0.7 Min Inches Max 0.067 Typ. 0.0275 DIM e1 e2 He Lp Millimeters Min 6.7 0.9 Max 7.3 15 Typ. 4.59 1.53 10 Min Inches Max Typ. 0.18 07 0.06 02 10
0.008 0.004 -
0.264 0.287 0.035 15 -
0.009 0.013 0.248 0.264 0.130 0.145
(c)Zetex Semiconductors plc 2004
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquaters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com
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